metal gate process
由EErben著作·2018·被引用6次—ThemetalgateforNMOStransistorsrequiresaworkfunctionclosetotheconductionbandofSi(∼4.1eV)andthePMOStransistorneedsametalgatewitha ...,由JRobertson著作·被引用728次—firstprocessfollowsthestandardprocessflow,butwithametalga...
Method for forming metal replacement gate of high ...
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2005年3月10日—Inareplacementgatefabricationapproach,apolysilicongateisformedoveranetchstoplayerincontactwithasingle-crystalsemiconductor ...
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